BSC030N08NS5ATMA1 MOSFET N-Ch 80V 100A

Short Description:

Manufacturers:Infineon Technologies

Product Category: Transistors – FETs, MOSFETs – Single

Data Sheet: BSC030N08NS5ATMA1

Description:MOSFET N-CH 80V 100A 8TDSON

RoHS status:RoHS Compliant


Product Detail

Features

Product Tags

♠ Product Description

Product Attribute Attribute Value
Manufacturer: Infineon
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TDSON-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 80 V
Id - Continuous Drain Current: 100 A
Rds On - Drain-Source Resistance: 4.5 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2.2 V
Qg - Gate Charge: 61 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 139 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Infineon Technologies
Configuration: Single
Fall Time: 13 ns
Forward Transconductance - Min: 55 S
Height: 1.27 mm
Length: 5.9 mm
Product Type: MOSFET
Rise Time: 12 ns
Series: OptiMOS 5
Factory Pack Quantity: 5000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 43 ns
Typical Turn-On Delay Time: 20 ns
Width: 5.15 mm
Part # Aliases: BSC030N08NS5 SP001077098
Unit Weight: 0.017870 oz

 


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  • •Optimized for high performance SMPS,e.g.sync.rec.

    •100% avalanche tested

    •Superior thermal resistance

    •N-channel

    •Qualified according to JEDEC1) for target applications

    •Pb-free lead plating;RoHS compliant

    •Halogen-free according to IEC61249-2-21

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