BSS123 MOSFET SOT-23 N-CH LOGIC
♠ Product Description
Product Attribute | Attribute Value |
Manufacturer: | onsemi |
Product Category: | MOSFET |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Id - Continuous Drain Current: | 170 mA |
Rds On - Drain-Source Resistance: | 6 Ohms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 800 mV |
Qg - Gate Charge: | 2.5 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 300 mW |
Channel Mode: | Enhancement |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Brand: | onsemi / Fairchild |
Configuration: | Single |
Fall Time: | 9 ns |
Forward Transconductance - Min: | 0.8 S |
Height: | 1.2 mm |
Length: | 2.9 mm |
Product: | MOSFET Small Signal |
Product Type: | MOSFET |
Rise Time: | 9 ns |
Series: | BSS123 |
Factory Pack Quantity: | 3000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Type: | FET |
Typical Turn-Off Delay Time: | 17 ns |
Typical Turn-On Delay Time: | 1.7 ns |
Width: | 1.3 mm |
Part # Aliases: | BSS123_NL |
Unit Weight: | 0.000282 oz |
♠ N-Channel Logic Level Enhancement Mode Field Effect Transistor
These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
• 0.17 A, 100 V
♦ RDS(on) = 6 @ VGS = 10 V
♦ RDS(on) = 10 @ VGS = 4.5 V
• High Density Cell Design for Extremely Low RDS(on)
• Rugged and Reliable
• Compact Industry Standard SOT−23 Surface Mount Package
• This Device is Pb−Free and Halogen Free