BSS123LT1G MOSFET 100V 170mA N-Channel
♠ Product Description
Product Attribute | Attribute Value |
Manufacturer: | onsemi |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Id - Continuous Drain Current: | 170 mA |
Rds On - Drain-Source Resistance: | 6 Ohms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.6 V |
Qg - Gate Charge: | - |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 225 mW |
Channel Mode: | Enhancement |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Brand: | onsemi |
Configuration: | Single |
Forward Transconductance - Min: | 80 mS |
Height: | 0.94 mm |
Length: | 2.9 mm |
Product: | MOSFET Small Signal |
Product Type: | MOSFET |
Series: | BSS123L |
Factory Pack Quantity: | 3000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 40 ns |
Typical Turn-On Delay Time: | 20 ns |
Width: | 1.3 mm |
Unit Weight: | 0.000282 oz |
• BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant