FGH40T120SMD-F155 IGBT Transistors 1200V 40A Field Stop Trench IGBT
♠ Product Description
Product Attribute | Attribute Value |
Manufacturer: | onsemi |
Product Category: | IGBT Transistors |
Technology: | Si |
Package / Case: | TO-247G03-3 |
Mounting Style: | Through Hole |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Collector-Emitter Saturation Voltage: | 2 V |
Maximum Gate Emitter Voltage: | 25 V |
Continuous Collector Current at 25 C: | 80 A |
Pd - Power Dissipation: | 555 W |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
Series: | FGH40T120SMD |
Packaging: | Tube |
Brand: | onsemi / Fairchild |
Continuous Collector Current Ic Max: | 40 A |
Gate-Emitter Leakage Current: | 400 nA |
Product Type: | IGBT Transistors |
Factory Pack Quantity: | 30 |
Subcategory: | IGBTs |
Part # Aliases: | FGH40T120SMD_F155 |
Unit Weight: | 0.225401 oz |
♠ IGBT - Field Stop, Trench 1200 V, 40 A FGH40T120SMD, FGH40T120SMD-F155
Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
• FS Trench Technology, Positive Temperature Coefficient
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
• 100% of the Parts tested for ILM(1)
• High Input Impedance
• These Devices are Pb−Free and are RoHS Compliant
• Solar Inverter, Welder, UPS & PFC applications