FGH40T120SMD-F155 IGBT Transistors 1200V 40A Field Stop Trench IGBT

Short Description:

Manufacturers: ON Semiconductor
Product Category: Transistors – IGBTs – Single
Data Sheet: FGH40T120SMD-F155
Description: IGBT 1200V 80A 555W TO247-3
RoHS status: RoHS Compliant


Product Detail

Features

Applications

Product Tags

♠ Product Description

Product Attribute Attribute Value
Manufacturer: onsemi
Product Category: IGBT Transistors
Technology: Si
Package / Case: TO-247G03-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2 V
Maximum Gate Emitter Voltage: 25 V
Continuous Collector Current at 25 C: 80 A
Pd - Power Dissipation: 555 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Series: FGH40T120SMD
Packaging: Tube
Brand: onsemi / Fairchild
Continuous Collector Current Ic Max: 40 A
Gate-Emitter Leakage Current: 400 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 30
Subcategory: IGBTs
Part # Aliases: FGH40T120SMD_F155
Unit Weight: 0.225401 oz

♠ IGBT - Field Stop, Trench 1200 V, 40 A FGH40T120SMD, FGH40T120SMD-F155

Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.


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  • • FS Trench Technology, Positive Temperature Coefficient

    • High Speed Switching

    • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A

    • 100% of the Parts tested for ILM(1)

    • High Input Impedance

    • These Devices are Pb−Free and are RoHS Compliant

    • Solar Inverter, Welder, UPS & PFC applications

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