MUN5113DW1T1G Bipolar Transistors – Pre-Biased SS BR XSTR PNP 50V
♠ Product Description
Product Attribute | Attribute Value |
Manufacturer: | onsemi |
Product Category: | Bipolar Transistors - Pre-Biased |
RoHS: | Details |
Configuration: | Dual |
Transistor Polarity: | PNP |
Typical Input Resistor: | 47 kOhms |
Typical Resistor Ratio: | 1 |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-363(PB-Free)-6 |
DC Collector/Base Gain hfe Min: | 80 |
Collector- Emitter Voltage VCEO Max: | 50 V |
Continuous Collector Current: | - 100 mA |
Peak DC Collector Current: | 100 mA |
Pd - Power Dissipation: | 256 mW |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Series: | MUN5113DW1 |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Brand: | onsemi |
DC Current Gain hFE Max: | 80 |
Height: | 0.9 mm |
Length: | 2 mm |
Product Type: | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity: | 3000 |
Subcategory: | Transistors |
Width: | 1.25 mm |
Unit Weight: | 0.000212 oz |
♠ Dual PNP Bias Resistor Transistors R1 = 47 k, R2 = 47 k PNP Transistors with Monolithic Bias Resistor Network
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant