NVH820S75L4SPB IGBT Modules 750V, 820A SSD

Short Description:

Manufacturers: onsemi
Product Category: IGBT Modules
Data Sheet: NVH820S75L4SPB
Description: IC SWITCH SPST 5.1 OHM 16TSSOP
RoHS status: RoHS Compliant


Product Detail

Features

Applications

Product Tags

♠ Product Description

Product Attribute Attribute Value
Manufacturer: onsemi
Product Category: IGBT Modules
Product: IGBT Silicon Modules
Configuration: 6-Pack
Collector- Emitter Voltage VCEO Max: 750 V
Collector-Emitter Saturation Voltage: 1.3 V
Continuous Collector Current at 25 C: 600 A
Gate-Emitter Leakage Current: 500 uA
Pd - Power Dissipation: 1000 W
Package / Case: 183AB
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Packaging: Tray
Brand: onsemi
Maximum Gate Emitter Voltage: 20 V
Mounting Style: SMD/SMT
Product Type: IGBT Modules
Factory Pack Quantity: 4
Subcategory: IGBTs
Technology: Si
Tradename: VE-Trac
Unit Weight: 2.843 lbs

♠ Automotive 750 V, 820 A Single Side Direct Cooling 6-Pack Power Module VE-Trac Direct Module NVH820S75L4SPB

The NVH820S75L4SPB is a power module from the VE−Trac Direct family of highly integrated power modules with industry standard footprints for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application.

The module integrates six Field Stop 4 (FS4) 750 V Narrow Mesa IGBTs in a 6−pack configuration, which excels in providing high current density, while offering robust short circuit protection and increased blocking voltage. Additionally, FS4 750 V Narrow Mesa IGBTs show low power losses during lighter loads, which helps to improve overall system efficiency in automotive applications.

For assembly ease and reliability, a new generation of press−fit pins are integrated into the power module signal terminals. In addition, the power module has an optimized pin−fin heatsink in the baseplate.


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  • • Direct Cooling w/ Integrated Pin−fin Heatsink
    • Ultra−low Stray Inductance
    • Tvjmax = 175°C Continuous Operation
    • Low VCESAT and Switching Losses
    • Automotive Grade FS4 750 V Narrow Mesa IGBT
    • Fast Recovery Diode Chip Technologies
    • 4.2 kV Isolated DBC Substrate
    • Easy to Integrate 6−pack Topology
    • This Device is Pb−Free and is RoHS Compliant

    • Hybrid and Electric Vehicle Traction Inverter
    • High Power Converters

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