SI3417DV-T1-GE3 MOSFET 30V Vds 20V Vgs TSOP-6
♠ Product Description
Product Attribute | Attribute Value |
Manufacturer: | Vishay |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | TSOP-6 |
Transistor Polarity: | P-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 8 A |
Rds On - Drain-Source Resistance: | 36 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Qg - Gate Charge: | 50 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 4.2 W |
Channel Mode: | Enhancement |
Tradename: | TrenchFET |
Series: | SI3 |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Brand: | Vishay Semiconductors |
Configuration: | Single |
Height: | 1.1 mm |
Length: | 3.05 mm |
Product Type: | MOSFET |
Factory Pack Quantity: | 3000 |
Subcategory: | MOSFETs |
Width: | 1.65 mm |
Unit Weight: | 0.000705 oz |
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see datasheet.
• Load Switches
• Adaptor Switch
• DC/DC Converter
• For Mobile Computing/Consumera