SI3417DV-T1-GE3 MOSFET 30V Vds 20V Vgs TSOP-6

Short Description:

Manufacturers: Vishay / Siliconix
Product Category: Transistors – FETs, MOSFETs – Single
Data Sheet: SI3417DV-T1-GE3
Description: MOSFET P-CH 30V 8A TSOP-6
RoHS status: RoHS Compliant


Product Detail

Features

Applications

Product Tags

♠ Product Description

Product Attribute Attribute Value
Manufacturer: Vishay
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TSOP-6
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 8 A
Rds On - Drain-Source Resistance: 36 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 50 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 4.2 W
Channel Mode: Enhancement
Tradename: TrenchFET
Series: SI3
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Vishay Semiconductors
Configuration: Single
Height: 1.1 mm
Length: 3.05 mm
Product Type: MOSFET
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Width: 1.65 mm
Unit Weight: 0.000705 oz

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    • 100 % Rg and UIS Tested

    • Material categorization:
    For definitions of compliance please see datasheet.

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