STD35P6LLF6 MOSFET P-channel 60V 0.025Ohm typ 35A STripFET F6 Power MOSFET
♠ Product Description
Product Attribute | Attribute Value |
Manufacturer: | STMicroelectronics |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | TO-252-3 |
Transistor Polarity: | P-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Id - Continuous Drain Current: | 35 A |
Rds On - Drain-Source Resistance: | 28 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Qg - Gate Charge: | 30 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 70 W |
Channel Mode: | Enhancement |
Tradename: | STripFET |
Series: | STD35P6LLF6 |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Brand: | STMicroelectronics |
Configuration: | Single |
Fall Time: | 21 ns |
Product Type: | MOSFET |
Rise Time: | 39 ns |
Factory Pack Quantity: | 2500 |
Subcategory: | MOSFETs |
Transistor Type: | 1 P-Channel Power MOSFET |
Typical Turn-Off Delay Time: | 171 ns |
Typical Turn-On Delay Time: | 51.4 ns |
Unit Weight: | 0.011640 oz |
♠ STD35P6LLF6 P-channel 60 V, 0.025 Ω typ., 35 A STripFET™ F6 Power MOSFET in a DPAK package
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Switching applications