STD4NK100Z MOSFET Automotive-grade N-channel 1000 V, 5.6 Ohm typ 2.2 A SuperMESH Power MOSFET
♠ Product Description
Product Attribute | Attribute Value |
Manufacturer: | STMicroelectronics |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | TO-252-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 1 kV |
Id - Continuous Drain Current: | 2.2 A |
Rds On - Drain-Source Resistance: | 6.8 Ohms |
Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
Qg - Gate Charge: | 18 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 90 W |
Channel Mode: | Enhancement |
Qualification: | AEC-Q101 |
Tradename: | SuperMESH |
Series: | STD4NK100Z |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Brand: | STMicroelectronics |
Configuration: | Single |
Fall Time: | 39 ns |
Height: | 2.4 mm |
Length: | 10.1 mm |
Product: | Power MOSFETs |
Product Type: | MOSFET |
Rise Time: | 7.5 ns |
Factory Pack Quantity: | 2500 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Type: | SuperMESH |
Typical Turn-On Delay Time: | 15 ns |
Width: | 6.6 mm |
Unit Weight: | 0.011640 oz |
♠ Automotive-grade N-channel 1000 V, 5.6 Ω typ., 2.2 A SuperMESH™ Power MOSFET Zener-protected in a DPAK
This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
• Designed for automotive applications and AEC-Q101 qualified
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
• Switching application