STH3N150-2 MOSFET N-CH 1500V 6Ohm 2.5A PowerMESH
♠ Product Description
Product Attribute | Attribute Value |
Manufacturer: | STMicroelectronics |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package/Case: | H2PAK-2 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 1.5 kV |
Id - Continuous Drain Current: | 2.5 A |
Rds On - Drain-Source Resistance: | 9 Ohms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Qg - Gate Charge: | 29.3 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 140 W |
Channel Mode: | Enhancement |
Tradename: | PowerMESH |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Brand: | STMicroelectronics |
Configuration: | Single |
Fall Time: | 61 ns |
Forward Transconductance - Min: | 2.6 S |
Product Type: | MOSFET |
Rise Time: | 47 ns |
Series: | STH3N150-2 |
Factory Pack Quantity: | 1000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel Power MOSFET |
Typical Turn-Off Delay Time: | 45 ns |
Typical Turn-On Delay Time: | 24 ns |
Unit Weight: | 4 g |
♠ N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages
These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
• 100% avalanche tested
• Intrinsic capacitances and Qg minimized
• High speed switching
• Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
• Switching applications