SUD19P06-60-GE3 MOSFET 60V 19A 38.5W 60mohm @ 10V

Short Description:

Manufacturers:Vishay / Siliconix

Product Category: Transistors – FETs, MOSFETs – Single

Data Sheet: SUD19P06-60-GE3

Description:MOSFET P-CH 60V 18.3A TO-252

RoHS status:RoHS Compliant


Product Detail

Features

Applications

Product Tags

♠ Product Description

Product Attribute Attribute Value
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 50 A
Rds On - Drain-Source Resistance: 60 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 40 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 113 W
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 30 ns
Forward Transconductance - Min: 22 S
Product Type: MOSFET
Rise Time: 9 ns
Series: SUD
Factory Pack Quantity: 2000
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 65 ns
Typical Turn-On Delay Time: 8 ns
Part # Aliases: SUD19P06-60-BE3
Unit Weight: 0.011640 oz

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