W9864G6KH-6 DRAM 64Mb, SDR SDRAM, x16, 166MHz, 46nm

Short Description:

Manufacturers: Winbond
Product Category:DRAM
Data Sheet: W9864G6KH-6
Description:IC DRAM 64M PARALLEL 54TSOP
RoHS status: RoHS Compliant


Product Detail

Features

Product Tags

♠ Product Description

Product Attribute Attribute Value
Manufacturer: Winbond
Product Category: DRAM
RoHS:  Details
Type: SDRAM
Mounting Style: SMD/SMT
Package/Case: TSOP-54
Data Bus Width: 16 bit
Organisation: 4 M x 16
Memory Size: 64 Mbit
Maximum Clock Frequency: 166 MHz
Access Time: 6 ns
Supply Voltage - Max: 3.6 V
Supply Voltage - Min: 3 V
Supply Current - Max: 50 mA
Minimum Operating Temperature: 0 C
Maximum Operating Temperature: + 70 C
Series: W9864G6KH
Brand: Winbond
Moisture Sensitive: Yes
Product Type: DRAM
Factory Pack Quantity: 540
Subcategory: Memory & Data Storage
Unit Weight: 9.175 g

♠ 1M ✖ 4 BANKS ✖ 16 BITS SDRAM

W9864G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words  4 banks  16 bits. W9864G6KH delivers a data bandwidth of up to 200M words per second. For different application, W9864G6KH is sorted into the following speed grades: -5, -6, -6I and -7. The -5 grade parts can run up to 200MHz/CL3. The -6 and -6I grade parts can run up to 166MHz/CL3 (the -6I industrial grade which is guaranteed to support -40°C ~ 85°C). The -7 grade parts can run up to 143MHz/CL3 and with tRP = 18nS.

Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle.

The multiple bank nature enables interleaving among internal banks to hide the precharging time.By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9864G6KH is ideal for main memory in high performance applications.


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  • •  3.3V ± 0.3V for -5, -6 and -6I speed grades power supply

    •  2.7V~3.6V for -7 speed grades power supply 

    •  Up to 200 MHz Clock Frequency 

    •  1,048,576 words 

    •  4 banks 

    •  16 bits organization 

    •  Self Refresh Current: Standard and Low Power 

    •  CAS Latency: 2 and 3 

    •  Burst Length: 1, 2, 4, 8 and full page 

    •  Sequential and Interleave Burst 

    •  Byte Data Controlled by LDQM, UDQM 

    •  Auto-precharge and Controlled Precharg 

    •  Burst Read, Single Writes Mode 

    •  4K Refresh Cycles/64 mS 

    •  Interface: LVTTL 

    •  Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant

     

     

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